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ABID , Idriss

Last name: ABID

First name: Idriss

January 18, 2023 (v1)

Journal article

Metadata-only

High Al-content AlGaN channel high electron mobility transistors on silicon substrate

Mehta, Jash ABID, Idriss Bassaler, Julien

The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging Al x Ga 1-x N channel based heterostructures are...

Uploaded on: February 22, 2023