AL TARADEH , Nedal

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including the a-GaN plane. The...

This work presents an innovative technology where GaN-based vertical and lateral devices are monolithically integrated. Indeed, this technology will enable to drive high-power switching devices (vertical GaN power FinFETs) using lateral GaN HEMTs with minimum losses and high stability. The main challenge of this technology is the electrical...

This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring...