A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the...
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March 28, 2022 (v1)PublicationUploaded on: December 3, 2022
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July 2022 (v1)Journal article
International audience
Uploaded on: December 3, 2022 -
September 2023 (v1)Journal article
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electricfield that separates electrons and holes along the growth direction. This electric field, and thus exciton energy,can be reduced by depositing metallic layers on the sample surface. Using spatially resolved microphotolu-minescence...
Uploaded on: November 25, 2023