ARROYO-ROJAS DASILVA , Yadira

Semipolar (1122 ) GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are studied by transmission electron microscopy (TEM). The layers exhibit numerous defects with different geometries in comparison to the growth along the c-axis, they are identified as mostly partial dislocations, basal and prismatic...

The defect structures in semipolar (11¯22)-GaN, AlN layers grown on m-sapphire by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are characterized by transmission electron microscopy. The epitaxial relationships are identified as [10¯10]GaN ǁ [11¯20]sap and [1¯213]GaN ǁ [0001]sap. Defects are identified as mostly...