AVEDILLO DE JUAN , María José

En los Capítulos 2 y 3 se aborda el diseño lógico FSMs. En el primero de ellos estudiamos el problema de la reducción del número de estados en máquinas incompletamente especificadas, recogemos el estado del arte del problema, con la redefinición de objetivos y criterios de coste con que se aborda en un entorno automatizado de diseño VLSI, y...

Multiple-valued Logic (MVL) circuits are one of the most attractive applications of the Monostable-to-Multistable transition Logic (MML), and they are on the basis of advanced circuits for communications. The operation of such quantizer has two steps: sampling and holding. Once the quantizer samples the signal, it must maintain the sampled...

MOBILE networks can be operated in a gate-level pipelined fashion allowing high through-output. If MOBILE gates are directly chained, a four-phase clock scheme is required for this. A single-phase scheme is possible adding latches to the MOBILE gates. Proposed and experimentally validated is a new single-phase interconnection scheme that...

The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an IV characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The...

Monostable to Bistable (MOBILE) gates are very suitable for the implementation of gate-level pipelines which can be achieved without resorting to memory elements. MOBILE operating principle is implemented using two series connected Negative Differential Resistance (NDR) devices with a clocked bias. This paper describes and experimentally...

MOnostable-BIstable Logic Element (MOBILE) networks can be operated in a gate-level pipelined fashion (nanopipeline) allowing high through output. Resonant tunneling diode (RTD)-based MOBILE nanopipelined circuits have been reported using different clock schemes including a four-phase strategy and a single-phase clock scheme. In particular,...

The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have...

La existencia de dispositivos con una característica I-V que exhibe una resistencia diferencial negativa (Negative Differential Resistance, NDR) resulta atractiva desde el punto de vista del diseño de circuitos, como ha sido demostrado por los circuitos que usan diodos basados en el efecto túnel resonante (Resonant Tunneling Diodes, RTDs)....

Nano-oscillators based on phase transitions materials (PTM) are being explored for the implementation of different non-conventional computing paradigms. This article describes the capability of such autonomous non-linear oscillators to store phase-encoded information. A latch based in sub-harmonic injection locking using an oscillator composed...

MOBILE networks can be operated in a gate-level pipelined fashion allowing high through-output. If MOBILE gates are directly chained, a four-phase clock scheme is required. A single phase scheme has been recently reported that alternates rising and falling edge-triggered MOBILE gates. A novel two-phase interconnection scheme resembling...

The incorporation of resonant tunneling diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance, producing higher circuit speed, reduced component count, and/or lower power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some...

Abstract: Research on fine-grained pipelines can be a way to obtain high-performance applications. Monostable to bistable (MOBILE) gates are very suitable for implementing gate-level pipelines, which can be achieved without resorting to memory elements. The MOBILE operating principle is implemented operating two series connected negative...

A novel realisation of inverted majority gates based on a programmable MOS-NDR device is presented. A comparison, in terms of area and power consumption, has been performed to demonstrate that the proposed circuit is more efficient than a similar reported structure.

Devices exhibiting Negative Differential Resistance (NDR) in their I-V characteristic are attractive from the design point of view and circuits exploiting it have been reported showing advantages in terms of performance and/or cost. In particular, logic circuits based on the monostable to bistable operating principle can be built from the...

In this paper, five projected tunnel FET (TFET) technologies are evaluated and compared with MOSFET and FinFET transistors for high-performance low-power objectives. The scope of this benchmarking exercise is broader than that of previous studies in that it seeks solutions to different identified limitations. The power and the energy of the...

Many emerging devices are currently being explored as potential alternatives to complementary metal–oxide–semiconductor technologies for overcoming power density and energy efficiency limitations. It is now generally accepted that these emerging devices need to be evaluated at the circuit level. In this paper, we investigate the speed and power...

Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of CMOS technology. In this paper, the evaluation and the comparison of the performance of distinct fan-in logic gates, using a set of widely accepted...

Tunnel transistors are one of the most attractive steep subthreshold slope devices which are being investigating to overcome power density and energy inefficiency exhibited by CMOS technology. These transistors exhibit asymmetric conduction which can cause sustained noise voltage pulses (bootstrapping) within digital TFETs circuits leading to...

RF to DC passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts. In this paper, we analyze the limitations of typical TFET rectifier topologies associated with the forward biasing of their...