Dispositivo per l'estrazione di energia da fluido in movimento
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2010 (v1)PublicationUploaded on: March 31, 2023
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2009 (v1)Publication
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2015 (v1)Publication
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2009 (v1)Publication
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1989 (v1)Publication
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1998 (v1)Publication
A review of ripple formation on solid surfaces induced by ion sputtering is presented. We review in detail very recent development in this field showing that the ripple morphology, generated by ion bombardment at normal incidence on (110) metal surfaces, is a consequence of the effect both of a Schwoebel barrier on inter-layer diffusion...
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1989 (v1)Publication
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1988 (v1)Publication
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2003 (v1)Publication
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2012 (v1)Publication
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2003 (v1)Publication
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1994 (v1)Publication
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2016 (v1)Publication
The development of the Internet of Things infrastructure requires the deployment of millions of heterogeneous sensors embedded in the environment. The powering of these sensors cannot be done with wired connections, and the use of batteries is often impracticable. Energy harvesting is the common proposed solution, and many devices have been...
Uploaded on: April 14, 2023 -
2017 (v1)Publication
Flapping states of an energy harvesting device have been investigated by means of experiments, numerical simulations and a phenomenological model. The main aim is to predict the geometrical/physical properties of the system allowing sustained flapping limit cycles to emerge. These latter regimes are interesting when the system is used to...
Uploaded on: October 11, 2023 -
2002 (v1)Publication
Surface etching by ion sputtering can be used to pattern surfaces. Recent studies using the high-spatial-resolution capability of the scanning tunnelling microscope revealed in fact that ion bombardment produces repetitive structures at nanometre scale, creating peculiar surface morphologies ranging from self-affine patterns to...
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1989 (v1)Publication
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1998 (v1)Publication
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2002 (v1)Publication
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2001 (v1)Publication
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1994 (v1)Publication
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1999 (v1)Publication
The surface morphology generated by ion sputtering on a Cu(110) crystal has been investigated by Scanning Tunneling Microscopy (STM). A ripple structure is observed for all the considered values of the incident ion beam angle theta (0 degrees < theta < 70 degrees). In particular, normal:sputtering produces a well defined ripple structure whose...
Uploaded on: April 14, 2023