BALASHOV , T.

An epitaxial layer of graphene was grown on a pre patterned 6H-SiC(0001) crystal. The graphene smoothly covers the hexagonal nano-holes in the substrate without the introduction of small angle grain boundaries or dislocations. This is achieved by an elastic deformation of the graphene by ~0.3% in accordance to its large elastic strain limit....

Single atomic layers of graphene show intriguing electronic and transport properties, and in the last few years they have been in the focus of interest for two-dimensional electron devices with high electron mobilities. Although the classical way to produce graphene is by exfoliation from a graphite crystal, supported graphene layers can also...