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April 7, 2008 (v1)Conference paperUploaded on: December 3, 2022
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August 25, 2008 (v1)Conference paper
Les boîtes quantiques GaN présentent des propriétés de confinement très attrayantes, jusqu'à 300K. De nombreux développements récents ont montré qu'elles peuvent se comparer favorablement aux boîtes quantiques antérieures et mieux maîtrisées, InAs et CdTe en particulier. Mais l'étude de la structure fine des complexes excitoniques dans les...
Uploaded on: December 3, 2022 -
April 7, 2008 (v1)Conference paper
International audience
Uploaded on: February 22, 2023 -
June 19, 2009 (v1)Conference paper
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Uploaded on: December 4, 2022 -
October 6, 2008 (v1)Conference paper
oral
Uploaded on: February 22, 2023 -
October 22, 2006 (v1)Conference paper
oral
Uploaded on: December 4, 2022 -
September 16, 2007 (v1)Conference paper
We report on polarization-resolved micro-photoluminescence experiments performed on a single GaN/AlN polar quantum dot (QD) grown on Si(111) substrate. We have performed a systematic study of about 50 QDs. The emission of about half of the QD excitons is strongly linearly polarized, up to 90%. Such a polarization is known to be the...
Uploaded on: February 28, 2023 -
October 6, 2008 (v1)Conference paper
oral
Uploaded on: December 4, 2022 -
March 5, 2007 (v1)Conference paper
International audience
Uploaded on: February 28, 2023 -
July 24, 2006 (v1)Publication
We present single dot spectroscopy of hexagonal GaN/AlN self‐assembled quantum dots (QDs) grown by MBE along the (0001) axis. The GaN quantum dots are grown on an AlN epilayer on Si (111) substrate, with dot densities between 108 and 1011 cm−2. We study the micro‐photoluminescence spectra of a few quantum dots. In the energy range corresponding...
Uploaded on: February 28, 2023 -
June 20, 2008 (v1)Journal article
We report microphotoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular-beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily...
Uploaded on: March 26, 2023 -
November 15, 2006 (v1)Journal article
We report microphotoluminescence studies of single GaN∕AlN quantum dots grown by molecular beam epitaxy on Si(111) substrates. Small groups of emission lines characterize each single dot, with linewidths mostly limited by our experimental setup to 1 or 2meV. By using time-dependent microphotoluminescence, we observe both the continuous and...
Uploaded on: February 28, 2023 -
June 20, 2008 (v1)Journal article
We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily...
Uploaded on: December 4, 2022 -
May 15, 2006 (v1)Conference paper
International audience
Uploaded on: December 3, 2022 -
March 15, 2006 (v1)Journal article
Wurtzite GaN∕AlN quantum dots (QDs) are studied by time-resolved photoluminescence. Careful measurements allow us to reach the regime of a single electron-hole pair per dot, evidenced by a monoexponential decay of the luminescence and a stop of the time-dependent shift of the emission energy. The transition energy and the radiative lifetime of...
Uploaded on: February 28, 2023