B
K
Last name: BARIL
First name: Kilian
International audience
This work illustrates the potential of dark-field X-ray microscopy (DFXM), a 3D imaging technique of nanostructures, in characterizing novel epitaxial structures of gallium nitride (GaN) on top of GaN/AlN/Si/SiO 2 nano-pillars for optoelectronic applications. The nano-pillars are intended to allow independent GaN nanostructures to coalesce into...
In this paper, we report the use of three pendeo-epitaxy growth approaches as a way of reducing the threading dislocation density (TDD) of 20 × 20 μm$^2$ GaN platelets to be used for the development of micro light-emitting diodes (μLEDs). The method relies on the coalescence of GaN crystallites grown on top of a network of deformable pillars...
International audience
Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...
Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...