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BARON , Nicolas

Last name: BARON

First name: Nicolas

September 23, 2009 (v1)

Publication

Metadata-only

Optimization of the growth by ammonia source molecular beam epitaxy of (Al,Ga)N/GaN high electron mobility transistors on (111) oriented silicon substrate

Baron, Nicolas

Significant advances in the synthesis of wide band gap GaN-based semiconductors now allow the realization of optoelectronic devices (LEDs, lasers) but also electronic devices (transistors). Because of the lack of GaN or AlN native substrate, GaN-based devices are usually grown on silicon carbide (SiC), sapphire (Al2O3), or silicon substrates...

Uploaded on: December 4, 2022