International audience
We investigate the morphological evolution of SiGe quantum dots deposited on Si( 100) during longtime annealing. At low strain, the dots' self-organization begins by an instability and interrupts when (105) pyramids form. This evolution and the resulting island density are quantified by molecular-beam epitaxy. A kinetic model accounting for...
Propane/hydrogen CVD growth of graphene on SiC, studied since 2010 [1], consists simply to grow graphene from propane in a hydrogen/argon atmosphere. The presence of hydrogen in the gas phase promotes Si excess on the surface, hence making impossible graphene growth without propane flow [2]. This makes propane/hydrogen CVD very different from...
Strained epitaxial SiGe on vicinal Si(001) substrates develops a morphological instability perpendicular to the steps unlike the usual growth instabilities on vicinal substrates, eventually leading to planar nanowires. We assess both theoretically and experimentally the effect of strain anisotropy on the 1D elongation of the...
International audience
Propane/hydrogen CVD growth of graphene on SiC, studied since 2010,1 consists simply to grow graphene from propane in a hydrogen/argon atmosphere. The presence of hydrogen in the gas phase promotes Si excess on the surface, hence making impossible graphene growth without propane flow.2 This makes propane/hydrogen CVD very different from silicon...
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the...