We investigate the morphological evolution of SiGe quantum dots deposited on Si( 100) during longtime annealing. At low strain, the dots' self-organization begins by an instability and interrupts when (105) pyramids form. This evolution and the resulting island density are quantified by molecular-beam epitaxy. A kinetic model accounting for...
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2013 (v1)Journal articleUploaded on: March 26, 2023
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February 2014 (v1)Book section
International audience
Uploaded on: December 4, 2022 -
2019 (v1)Journal article
Strained epitaxial SiGe on vicinal Si(001) substrates develops a morphological instability perpendicular to the steps unlike the usual growth instabilities on vicinal substrates, eventually leading to planar nanowires. We assess both theoretically and experimentally the effect of strain anisotropy on the 1D elongation of the...
Uploaded on: May 5, 2023 -
February 2019 (v1)Journal article
International audience
Uploaded on: December 3, 2022 -
May 28, 2021 (v1)Journal article
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the...
Uploaded on: December 4, 2022