B

L

BOUGUEN , L.

Last name: BOUGUEN

First name: L.

2009 (v1)

Journal article

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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Bouguen, L. Konczewicz, L. Contreras, S.

We present a detailed investigation of the different factors that rule the temperature dependence of the AlGaN/AlN/GaN Hall-FET devices in the temperature range 300-500 degrees C. To understand the origin of the apparent increase in drive-in current density which affects devices above 300 degrees C, several series of experiments have been done....

Uploaded on: December 4, 2022
July 22, 2008 (v1)

Conference paper

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Pressure characterization of AlGaN/GaN Hall sensors

Konczewicz, Leszek Contreras, Sylvie Bouguen, L.

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Uploaded on: December 4, 2022
September 2007 (v1)

Conference paper

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Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence

Bouguen, L. Contreras, Sylvie Jouault, Benoit

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Uploaded on: December 3, 2022