BRÄNDLI , Virginie

Abstract It is shown that substrate pixelisation before epitaxial growth can significantly impact the emission color of semiconductor heterostructures. The wavelength emission from In x Ga 1−x N/GaN quantum wells can be shifted from blue to yellow simply by reducing the mesa size from 90 × 90 µm 2 to 10 × 10 µm 2 of the patterned silicon used...

The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet. In 2018, a new single-photon source was discovered in gallium nitride (GaN) showing high potential thanks to its...

National audience

In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit...

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm 2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold...