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December 3, 2018 (v1)PublicationUploaded on: December 4, 2022
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January 2022 (v1)Journal article
Les propriétés germicides des rayonnements ultraviolets (UV) suscitent un intérêt de plus en plus important dans les domaines d'applications stratégiques que sont l'environnement et la santé. Les diodes électroluminescentes (LEDs) semi-conductrices à base de nitrure d'aluminium et de gallium représentent les nouvelles sources d'émission UV qui...
Uploaded on: December 4, 2022 -
February 3, 2014 (v1)Conference paper
Al, Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still...
Uploaded on: March 26, 2023 -
March 2017 (v1)Journal article
AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as...
Uploaded on: December 3, 2022 -
2015 (v1)Conference paper
GaN-Al0.5NGa0.5N quantum dots deposited on (11-22) planes have been grown by combining Molecular Beam Epitaxy and Metal Organic Vapour Phase Epitaxy. This combination is interesting for realization of ultraviolet operation light emitting diodes, lasers andsingle photon sources,… (1,3) The growth of dots was achieved by MBE using ammonia as...
Uploaded on: March 26, 2023 -
October 1, 2018 (v1)Journal article
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Uploaded on: December 3, 2022 -
February 3, 2018 (v1)Journal article
The optical properties of Al0.1Ga0.9N nanostructures grown by molecular beam epitaxy on Al0.5Ga0.5N (0001) templates are investigated. By combining morphological and photo- luminescence (PL) characterizations, we have performed an in-depth analysis of the nanostructures properties as a function of the deposited amount. It is shown that: 1) the...
Uploaded on: February 28, 2023 -
May 18, 2016 (v1)Conference paper
International audience
Uploaded on: February 28, 2023 -
August 24, 2023 (v1)Journal article
Aluminium Gallium Nitride (Al y Ga 1-y N) quantum dots (QDs) with thin sub-µm Al x Ga 1-x N layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface roughness was investigated by atomic force...
Uploaded on: October 13, 2023 -
July 2020 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
July 4, 2017 (v1)Conference paper
Grâce à une nouvelle combinaison des modes de croissances EJM et MOCVD nous avons réalisés des guides d'onde à base d'AlN et de GaN mono-cristalins sur saphir qui présentent de très faibles pertes à la propagation. Nous avons pu démontrer que ces guides ont des possibilités très intéressantes de doublage de fréquence dans le proche IR et le...
Uploaded on: February 28, 2023 -
November 27, 2020 (v1)Journal article
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Uploaded on: December 4, 2022 -
November 30, 2020 (v1)Journal article
AlGaN based light emitting diodes (LEDs) will play a key role for the development of applications in the ultra-violet (UV). In the UVB region (280–320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED performances still need to be improved to reach commercial markets. In particular, the design and the...
Uploaded on: December 4, 2022 -
November 11, 2018 (v1)Publication
Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
Uploaded on: December 4, 2022 -
May 22, 2020 (v1)Journal article
We exhibit both experimentally and theoretically a novel growth mode for the epi-taxy of AlGaN quantum dots (QD), where they are eventually produced without their usual surrounding wetting layer. If the generic evolution of QD is ruled by the elastic relaxation and capillary effects, evaporation occurs here on a time scale similar to that of...
Uploaded on: December 4, 2022 -
September 30, 2013 (v1)Journal article
We report an unusual temperature dependence of exciton lifetimes in arrays of GaN nanostructures grown onsemipolar (11-22) oriented Al0.5Ga0.5Nalloy by molecular beam epitaxy.Atomic force microscopy measurementsrevealed: (i) a one-dimensional ordering tendency along the [1-100] crystallographic direction together with (ii)an in-plane anisotropy...
Uploaded on: December 4, 2022 -
August 28, 2018 (v1)Journal article
AlN epilayer properties (120 nm thick) grown by ammonia assisted molecular beam epitaxy on c-sapphire substrates with different low temperature AlN buffer layers (LT-BL) have been studied. The role of the LT-BL on the AlN structural and optical properties was investigated as a function of the LT-BL thickness and growth temperature. Optimum...
Uploaded on: December 4, 2022 -
2023 (v1)Journal article
In the case of molecular beam epitaxy (MBE), the Mg acceptors are electrically active in the as‐grown material and a priori no additional annealing procedure is necessary. However, there are still some peculiarities in the electrical properties of ammonia‐process grown GaN:Mg and some annealing effect can be observed. Additionally, the...
Uploaded on: November 25, 2023 -
December 2, 2022 (v1)Journal article
In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and...
Uploaded on: October 13, 2023 -
October 2016 (v1)Journal article
Electrical transport (resistivity and Hall Effect) have been studied in silicon doped aluminum nitride (AlN) thick epitaxial layers from 250 K up to 1000 K. The investigated samples, grown by molecular beam epitaxy were characterized by n-type conduction with an ambient temperature free carrier concentration of about ~ 1 x 10^15 cm^3. The donor...
Uploaded on: February 28, 2023 -
2018 (v1)Journal article
Blue (Ga,In)N-based light-emitting diodes (LEDs) grown on a Si(111) substrate by metal-organic vapor phase epitaxy are transferred on a flexible tape after the Si substrate removal. Their optical and thermal behaviors are measured and compared to those of regular LEDs on Si. The light output power of the flexible LEDs is increased due to a...
Uploaded on: December 4, 2022 -
May 3, 2018 (v1)Publication
En combinant EJM et EPVOM nous avons réalisés des guides d'onde à base d'AlN et de GaN mono-cristallins qui présentent de très faibles pertes à la propagation et des possibilités d'accord de phase modal intéressantes. A partir de ces structures, nous avons réalisés des guides canaux dont nous présentons les performances linéaires et non...
Uploaded on: December 4, 2022 -
July 14, 2015 (v1)Journal article
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Uploaded on: March 26, 2023