June 10, 2024 (v1)
Conference paper
Using micro-Raman spectroscopy on MOCVD slightly n-doped GaN on sapphire structures (1.5 x 10$^{15}$ cm$^{-3}$ – 6.5 x 10$^{15}$ cm$^{-3}$), we report a method to dissociate biaxial stress contribution from n carrier concentration contribution in A1(LO) Raman peak position. For all characterized samples, the main Raman peaks A$_1$(LO) and...
Uploaded on: July 10, 2024