International audience
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2012 (v1)Conference paperUploaded on: December 4, 2022
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2011 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2013 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
June 5, 2023 (v1)Conference paper
We experimentally demonstrate polariton laser in a GaN ridge waveguide. The strong-coupling regime is assessed through a comparison of the measured and modeled cavity free spectral range (FSR). The findings reveal that the laser exhibits a transition from monomode to multimode operation as the temperature is increased from 70K to 150K. The...
Uploaded on: December 10, 2023 -
July 1, 2024 (v1)Conference paper
Le laser à polaritons en géométrie de guide d'onde intègre une couche active en régime de couplage fort exciton-photon. Dans une cavité GaN horizontale courte (60µm), nous démontrons un fonctionnement en continu ou en régime de blocage de modes contrôlable, dépendant du spectre de gain, de la dispersion de vitesse de groupe et de la...
Uploaded on: January 13, 2025 -
October 1, 2024 (v1)Publication
Le laser à polaritons en géométrie de guide d'onde intéresse de par ses propriétés uniques résultant du couplage fort exciton-photon. Cette étude se concentre sur une cavité GaN courte de 60 µm, où le fonctionnement en continu ou en régime de blocage de mode est observé. La dépendance de ces régimes est étroitement liée au spectre de gain, à la...
Uploaded on: January 13, 2025 -
June 5, 2023 (v1)Conference paper
Polaritons in waveguides offer novel potentialities for their application in optoelectronics, based on the concept of the polariton laser. Unlike a conventional semiconductor laser, polariton laser does not require any population inversion in order to stimulate the light emission, which potentially allows the creation of laser components...
Uploaded on: January 13, 2025 -
November 12, 2023 (v1)Conference paper
Polariton lasers rely on the stimulated relaxation of polaritons instead of the population inversion involved in conventional semiconductor lasers. Exciton-polaritons are hybrid quasi-particles arising from the strong coupling between excitons and photons. Polariton lasers have first been investigated in vertical microcavities, and more...
Uploaded on: January 13, 2025 -
July 10, 2024 (v1)Journal article
So far, exciton-polariton (polariton) lasers were mostly single-mode lasers based on microcavities. Despite the large repulsive polariton-polariton interaction, a pulsed mode-locked polariton laser was never, to our knowledge, reported. Here, we use a 60-µm-long GaN-based waveguide surrounded by distributed Bragg reflectors forming a multi-mode...
Uploaded on: April 5, 2025 -
October 27, 2020 (v1)Conference paper
Polaritonic waveguides are bringing new potentialities to the field of polaritonics. The low waveguide losses allow for long propagation distances, up to hundreds of microns. In GaAs waveguides at T=4K, the formation of bright temporal solitons was demonstrated [1], as well as the generation of a super-continuum. Wide bandgap materials offer...
Uploaded on: January 13, 2025 -
2014 (v1)Journal article
Cantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first...
Uploaded on: February 28, 2023 -
June 21, 2021 (v1)Conference paper
The physics of gain in interband semiconductor lasers is mostly discussed in terms of population inversion for electrons and holes and the associated Bernard-Durrafourg condition. Due to the reciprocity between the processes of absorption and stimulated emission, one consequence is that lasing action can only be reached in standard ridge lasers...
Uploaded on: January 13, 2025 -
August 30, 2021 (v1)Publication
We present a ridge waveguide polariton laser very similar to standard ridge lasers but, operating on a fundamentally different lasing scheme. The structure consists in a GaN waveguide, operating under strong coupling up to 300K with a 80meV Rabi splitting, and grown by metal-organic vapor phase epitaxy (MOVPE) on c-plane sapphire. Polariton in...
Uploaded on: January 13, 2025