CASTRUCCI , Paola

We demonstrated the high throughput production of ultra-thin SiNWs by the innovative Inductively Coupled Plasma (ICP) approach. Our investigations revealed that the vast majority (∼95%) of the ICP produced SiNWs grew according to the Oxide Assisted Growth mechanism, and the 5% through the Vapor-Liquid-Solid mechanism. These SiNWs present an...

Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the...