August 28, 2018 (v1)
Journal article
AlN epilayer properties (120 nm thick) grown by ammonia assisted molecular beam epitaxy on c-sapphire substrates with different low temperature AlN buffer layers (LT-BL) have been studied. The role of the LT-BL on the AlN structural and optical properties was investigated as a function of the LT-BL thickness and growth temperature. Optimum...
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