C

M

CHAUVAT , M

Last name: CHAUVAT

First name: M

March 7, 2011 (v1)

Journal article

Metadata-only

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112-2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

Lacroix, B. Chauvat, M Ruterana, P.

For the next-generation solid state lighting, the production of high quality semipolar (112¯2) GaN layers on sapphire obtained using asymmetric epitaxial lateral overgrowth (ELO) method has been investigated. This type of ELO leads to efficient blocking of the basal stacking faults (BSFs) in the bulk, and enables the formation of nondefective...

Uploaded on: September 26, 2024