CHAUVEAU , Jean Michel

The microstructure of nonpolar heteroepitaxial wurtzite films (GaN and ZnO-based) is dominated by the presence of planar basal stacking faults (BSFs). In this paper, transmission electron microscopy studies of both GaN and ZnO nonpolar films oriented either (11–20) or (1–100) and grown on sapphire substrates, permit to propose and evaluate...

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical parameter for the HEMT quality and lead to the...

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Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5 × 1018 at cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed...

The photoluminescence intensity of a light emitter embedded in an atom probe needle-shaped specimen varies with the morphological evolution of the latter during field evaporation. Light absorption and emission patterns within such an evolving system were calculated considering the increase in the reflectivity induced by the high electrostatic...

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration...