CHAUVEAU , Jean-Michel

Deep level transient spectroscopy of both majority and minority carrier traps is performed in a n-type, nitrogen doped homoepitaxial ZnO layer grown on a m-plane by molecular beam epitaxy. Deep levels, most of them being not detected in undoped ZnO, lie close to the band edges with ionization energies in the range 0.12-0.60 eV. The two hole...

Excitons complexes in ZnO/(Zn, Mg)O non-polar quantum well have been studied by usingcontinuous-wave photoluminescence according to temperature and to the density of excitation.The spectrum of photoluminescence of the quantum well consists of three different lines. Theratio between the intensities of these lines depends of the temperature but...

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A complete study based on advanced atomic force microscopy electrical mode called scanning spreading resistance microscopy (SSRM) is carried out on a series of samples of zinc oxide (ZnO) nanowires grown by chemical bath deposition with different doping concentrations using gallium (Ga). The concentration of free charge carriers determined...

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session 6: Caractérisations et Propriétés (Oral 15)

Surface diffusion is known to be of prime importance in the growth of semiconductor nanowires. In this work, we used ZnMgO layers as markers to analyze the growth mechanisms and kinetics during the deposition of ZnMgO/ZnO multilayered shells by molecular beam epitaxy on previously grown ZnO nanowire cores (so called core-shell...

The selection of the polarity of ZnO nanowires grown by chemical bath deposition offers a great advantage for their integration into a wide variety of engineering devices. However, the nucleation process of ZnO nanowires and its dependence on their polarity is still unknown despite its importance for optimizing their morphology and properties...

The photoluminescence (PL) properties of InAs/(Ga,In)(N,As) quantum dots (QDs) were analyzed and compared to those of InAs/(Ga,In)As QDs. While the PL intensity and the PL decay times of these samples are similar at low temperature, their decrease when the temperature increases is stronger in the case of InAs/(Ga,In)(N,As) QDs. This is...

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