We present magnetotransport measurements on a high electron density AlGaN/GaN heterostructure with two subbands populated at $\tau$ = 1.6 K. The transport scattering times, $\tau_\text{tr}$ , of each subband are first derived at low magnetic field by taking into account the magneto-intersubband scattering term. Then the quantum scattering...
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November 2014 (v1)Journal articleUploaded on: March 26, 2023
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2023 (v1)Journal article
The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet. In 2018, a new single-photon source was discovered in gallium nitride (GaN) showing high potential thanks to its...
Uploaded on: November 25, 2023 -
July 9, 2019 (v1)Conference paper
Dipolar, or indirect excitons (IXs) offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of such excitons. Indeed, compared to their counterparts in GaAs-based heterostructures, IXs in nitrides possess two key advantages....
Uploaded on: December 4, 2022 -
May 14, 2017 (v1)Conference paper
Using NH3-MBE, AlN-based HEMTs on silicon are demonstrated for the first time. Ultra-thin heterostructures typically consist of 200 nm-thick AlN buffer, followed by 20 nm-thick strained GaN channel, 3-10 nm-thick AlN barrier. 2DEG densities (Ns) are measured as a function of AlN barrier thicknesses. Value as high as 2.7x10 13 cm-2 is measured...
Uploaded on: December 4, 2022 -
July 15, 2019 (v1)Conference paper
Dipolar, or indirect excitons (IXs) offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of such excitons. Indeed, compared to their counterparts in GaAs-based heterostructures, IXs in nitrides possess two key advantages....
Uploaded on: December 4, 2022 -
May 21, 2023 (v1)Conference paper
In this work, the electrical properties of ScAlN/GaN high electron mobility transistor (HEMT) heterostructures grown by ammonia source molecular beam epitaxy are studied. The effect of growth temperature and ScAlN barrier thickness on 2DEG carrier density is investigated with capacitance-voltage measurements. Alloyed ohmic contacts have been...
Uploaded on: February 14, 2024 -
2018 (v1)Journal article
Blue (Ga,In)N-based light-emitting diodes (LEDs) grown on a Si(111) substrate by metal-organic vapor phase epitaxy are transferred on a flexible tape after the Si substrate removal. Their optical and thermal behaviors are measured and compared to those of regular LEDs on Si. The light output power of the flexible LEDs is increased due to a...
Uploaded on: December 4, 2022 -
July 12, 2019 (v1)Journal article
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by...
Uploaded on: December 4, 2022 -
April 8, 2019 (v1)Journal article
A new class of quasi 2D optical components, known as metasurfaces and exhibiting exceptional optical properties have emerged in recent years. The scattering properties of their subwavelength patterns allow molding the wavefront of light in almost any desired manner. While the proof of principle is demonstrated by various approaches, only a...
Uploaded on: December 4, 2022 -
March 25, 2018 (v1)Conference paper
Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong internal electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. The physics of indirect excitons (IXs) has been extensively studied in GaAs-based heterostructures: they can...
Uploaded on: December 4, 2022 -
November 11, 2018 (v1)Conference paper
Excitons in wide nitride Quantum Wells (QWs) are naturally indirect due to the strong internal electric field: within such excitons the electron and the hole are spatially separated, resulting in strong dipole moments and long radiative lifetimes. These properties offer the possibility to explore the collective exitonic phases with complex...
Uploaded on: December 4, 2022 -
February 1, 2019 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
May 2018 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
August 1, 2016 (v1)Journal article
The role that the mother substrate plays to influence the performance of InGaN/GaN-based light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For this purpose, the electroluminescent (EL) spectra and current density-voltage (J-V) characteristics of flexi-LEDs are studied under different convex bending...
Uploaded on: December 4, 2022 -
July 29, 2018 (v1)Conference paper
Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong built-in electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. The physics of indirect excitons (IXs) has been extensively studied in GaAs-based heterostructures: they can...
Uploaded on: December 4, 2022 -
December 2019 (v1)Journal article
Allowing subwavelength-scale-digitization of optical wavefronts to achieve complete control of light at interfaces, metasurfaces are particularly suited for the realization of planar phaseholograms that promise new applications in high-capacity information technologies. Similarly, the use of orbital angular momentum of light as a new degree of...
Uploaded on: December 4, 2022 -
May 27, 2020 (v1)Journal article
Controlling light properties with diffractive planar elements requires full-polarization channels and accurate reconstruction of optical signal for real applications. Here, we present a general method that enables wavefront shaping with arbitrary output polarization by encoding both phase and polarization information into pixelated...
Uploaded on: December 4, 2022 -
May 10, 2020 (v1)Conference paper
We report a general method for full-polarization generation based on pixelated metasurface. By encoding the holographic phase profile into such pixels, vectorial holograms are constructed for the application of multidirectional display and cylindrical vector beam (CVB).
Uploaded on: December 4, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: December 3, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: October 11, 2023 -
April 24, 2022 (v1)Conference paper
The H2MEMS project aims at developing and optimizing hydrogen sensors based on resonant MEMS for detection of hydrogen release in radioactive waste disposal facility. The principle adopted is based on measuring physical properties of the gas (mass density, viscosity, sound velocity and sound absorption) without requiring any sensitive layer....
Uploaded on: December 4, 2022