Electrical transport phenomena have been investigated in (Al,Ga)N/GaN heterostructures (without any intentional doping) with an Al content ranging from 10 to 32 %. Conductivity and Hall Effect measurements have been performed as a function of temperature up to 700 K. To analyse the temperature dependence of the two-dimensional electron gaz...
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June 1, 2004 (v1)Conference paperUploaded on: December 4, 2022
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April 7, 2014 (v1)Journal article
We report on room temperature electrically-induced terahertz emission from interdigitated GaN quantum well structures. The emission spectrum has been analysed in a Michelson interferometer using a 4K-Si bolometer as a terahertz detector. A resonant peak at the frequency of around 3 THz was observed in emission spectra. A threshold behaviour of...
Uploaded on: February 28, 2023