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CURUTCHET , Arnaud

Last name: CURUTCHET

First name: Arnaud

November 2021 (v1)

Journal article

Metadata-only

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Albany, Florent Lecourt, François Walasiak, Ewa

Fluorine ion migration in normally-off AlN/GaN HEMTs fabricated by fluorine ion plasma implantation technology is evidenced. Devices under test are co-integrated into the OMMIC commercial D006GH/D01GH MMIC process, providing fluorine-free normally-on HEMTs. Gate reverse bias step-stress experiment at a drain fixed voltage of 0 V, carried out as...

Uploaded on: December 3, 2022