DAMILANO , Benjamin

(Ga,In)N-based light emitting devices are very efficient in producing blue light and to a lesser extent green. Extending their spectral range to longer wavelengths while maintaining high efficiency is a challenge due to material and physical issues related to high-In content (Ga,In) N alloys. We review the current status of yellow and red...

International audience

Here we use off-axis electron holography combined with advanced transmission electron microscopy techniques to understand the opto-electronic properties of AlGaN tunnel junction (TJ)-light-emitting diode (LED) devices for ultraviolet emission. Four identical AlGaN LED devices emitting at 290 nm have been grown by metal–organic chemical vapour...

Les propriétés germicides des rayonnements ultraviolets (UV) suscitent un intérêt de plus en plus important dans les domaines d'applications stratégiques que sont l'environnement et la santé. Les diodes électroluminescentes (LEDs) semi-conductrices à base de nitrure d'aluminium et de gallium représentent les nouvelles sources d'émission UV qui...