DEFRANCE , Nicolas

Despite a lower growth temperature is generally considered as a drawback for achieving high crystal quality, the necessity to reduce the nucleation temperature of AlN on Silicon has permitted Molecular Beam Epitaxy (MBE) to demonstrate high performance for GaN transistors operating at high frequency. Compared to Metal-Organic Vapor Phase...

Regrown Ohmic contacts have been widely studied for high millimeter-wave applications. However, few were applied to InAl(Ga)N-based HEMT despite the lattice match benefits with GaN channel because of the poor thermal stability of the quaternary barrier. In this article, we use relatively low temperature (850 °C) MOVPE technique for the regrowth...

Schottky contacts on fluorine implanted AlGaN/GaN heterostructures with the ideality factor close to unity and low on-voltage threshold are presented in this paper. An SF 6 plasma anode pretreatment followed by a specific low-temperature annealing is also compared to a nonannealed sample. In addition, physical-model parameters are extracted by...

AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/Si High Electron Mobility Transistors (HEMTs)...

No description