DEMIERRY , P

The variation of the internal quantum efficiency (IQE) of single InGaN quantum well structures emitting from blue to red is studied as a function of the excitation power density and the temperature. By changing the well width, the indium content, and adding a strain compensation AlGaN layer, we could tune the intrinsic radiative recombination...

Time-resolved photoluminescence spectra of orange light emitting (Ga,In)N-based devices have been grown by metal-organic vapour phase epitaxy on C plane sapphire for indium compositions ranging up to 23 percents. The temperature dependent time resolved photoluminescence spectra collected through the 8K-300K range are found to exhibit behaviours...

AlGaN-based ultra-violet (UV) light emitting diodes (LEDs) are seen as the best solution for the replacement of traditional mercury lamp technology. By adjusting the Al concentration, a large emission spectrum range from 360 nm (GaN) down to 200 nm (AlN) can be covered. Owing to the large density of defects typically present in AlGaN materials...