DUPRÉ , Ludovic

The growth and characterization of semipolar GaN buffer, InGaN multiple quantum wells (MQWs), and light‐emitting diode (LED) structure on patterned silicon‐on‐insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. The early growth stages of GaN result in continuous and uniform stripes with small height...

Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...

Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...