Due to its large piezoelectric and spontaneous polarization coefficients combined with the possibility of being grown lattice-matched with GaN, wide bandgap ScAlN is becoming a promising material in III-nitride semiconductor technology. In this work, and for the first time, ScAlN growth has been performed by molecular beam epitaxy with ammonia...
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March 1, 2023 (v1)Journal articleUploaded on: October 15, 2023
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October 2023 (v1)Journal article
The properties of ScAlN layers grown by molecular beam epitaxy have been carefully studied using atom probe tomography (APT) and complementary techniques. The measured III-site fraction within the ScxAl1−xN layer is x = 0.16 ± 0.02, in good agreement with the values determined by x-ray photoelectron spectroscopy (XPS, x = 0.14) and secondary...
Uploaded on: December 20, 2023 -
May 21, 2023 (v1)Conference paper
In this work, the electrical properties of ScAlN/GaN high electron mobility transistor (HEMT) heterostructures grown by ammonia source molecular beam epitaxy are studied. The effect of growth temperature and ScAlN barrier thickness on 2DEG carrier density is investigated with capacitance-voltage measurements. Alloyed ohmic contacts have been...
Uploaded on: February 14, 2024