2007 (v1)
Journal article
International audience
Uploaded on: February 28, 2023
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May 3, 2022 (v1)Conference paper
International audience
Uploaded on: December 3, 2022 -
March 28, 2022 (v1)Journal article
Despite a high lateral breakdown voltage above 10 kV for large contact distances and a breakdown field of 5 MV cm −1 for short contact distances, an Al 0.9 Ga 0.1 N/GaN heterostructure with an 8 nm strained GaN channel grown on an AlN/sapphire template suffers from a low and anisotropic mobility. This work deals with a material study to...
Uploaded on: December 3, 2022 -
June 1, 2022 (v1)Conference paper
The rapidly increasing power demand, downsizing of power electronics and material specific performance limitation of silicon has led to the development of AlGaN/GaN heterostructures for high power applications. In this frame, emerging AlxGa1-xN channel based heterostructures show promising features for next generation of power electronics. In...
Uploaded on: December 4, 2022 -
June 18, 2024 (v1)Journal article
Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria....
Uploaded on: August 2, 2024