Superconducting nanowire single photon detectors (SNSPDs) made with thin NbN films can reach high performances. While sputtering has been the deposition method of choice, here, we show that ammonia-molecular beam epitaxy (NH3-MBE) can produce pertinent epitaxial cubic NbN thin films on silicon substrates using an AlN buffer. Despite granular...
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December 18, 2023 (v1)Journal articleUploaded on: January 13, 2025
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March 7, 2024 (v1)Journal article
GaN/AlxGa1−xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6–8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect due to the presence of the internal electric field which...
Uploaded on: March 7, 2024