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GÜHNE , T.

Last name: GÜHNE

First name: T.

July 27, 2008 (v1)

Conference paper

Metadata-only

Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells

Gühne, T. Bougrioua, Z. Nemoz, M.

Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed. We interpret these effects by first an...

Uploaded on: December 3, 2022
January 2007 (v1)

Journal article

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Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Bougrioua, Z. Laügt, M. Vennegues, P.

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material with better structural and optical properties....

Uploaded on: December 4, 2022