2013 (v1)
Journal article
We investigate the morphological evolution of SiGe quantum dots deposited on Si( 100) during longtime annealing. At low strain, the dots' self-organization begins by an instability and interrupts when (105) pyramids form. This evolution and the resulting island density are quantified by molecular-beam epitaxy. A kinetic model accounting for...
Uploaded on: March 26, 2023