G
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Last name: GROMOVYI
First name: M
International audience
International audience
International audience
International audience
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining...
We report a polariton laser in a GaN ridge waveguide with a switching from mono to multi-mode laser operation with temperature. The study of the free spectral range between the modes first leads to the unambiguous proof that the polaritons are in a regime of strong coupling. Above 150K, during the passage to the multi-mode laser, a flattening...
To highlight the specific character of polariton lasers, namely the absence of reciprocity between the processes leading to gain and loss, we present here the operation of a CW polariton laser in a ridge geometry with distributed Bragg reflectors (DBRs) forming the cavities. We explore the laser threshold under optical pumping, and we...