March 2013 (v1)
Journal article
The stress distribution on crack free thick continuous GaN film (12 mu m) grown by Metal organic chemical vapour deposition (MOCVD) on the arrays of different sizes of the patterned silicon substrate is investigated by micro-Raman (mu Raman) spectroscopy. On the largest crack free mesa (400 mu m) both mu-photoluminescence (mu PL) at low...
Uploaded on: December 4, 2022