We have fabricated the first ever proton beam imager using 11 p-i-n GaN diodes on sapphire. This shows the high potential of our approach which we will now develop with much larger arrays (128 pixels, 500µm pitch) and simultaneous reading by commercial Si read-out circuits to obtain a 1-D translating detector. In a later phase, we will develop...
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June 2, 2024 (v1)PublicationUploaded on: January 13, 2025
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2021 (v1)Journal articleEpitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties
Single-crystalline Zn3N2 thin films have been grown on MgO (100) and YSZ (100) substrates by plasma-assisted molecular beam epitaxy. Depending on growth conditions, the film orientation can be tuned from (100) to (111). For each orientation, x-ray diffraction and reflection high-energy electron diffraction are used to determine the epitaxial...
Uploaded on: June 21, 2023 -
2021 (v1)Journal articleEpitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties
Single-crystalline Zn3N2 thin films have been grown on MgO (100) and YSZ (100) substrates by plasma-assisted molecular beam epitaxy. Depending on growth conditions, the film orientation can be tuned from (100) to (111). For each orientation, x-ray diffraction and reflection high-energy electron diffraction are used to determine the epitaxial...
Uploaded on: December 3, 2022 -
August 14, 2021 (v1)Journal article
International audience
Uploaded on: December 4, 2022