May 2005 (v1)
Journal article
Highly resistive GaN (>1E+8 Ω#) is grown by MOVPE on sapphire with dislocation density in the range 1E+8 to 8E+8 /cm², using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm²/V/s at n_s∼7.6E+12 /cm². Good DC and RF small signal behaviour could be obtained in HEMTs processed on...
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