JUILLAGUET , S.

The 3C-SiC heteroepitaxial layers, voluntary doped with nitrogen, were grown by hot-wall chemical vapor deposition (CVD) on (111) and (10 0) oriented silicon substrates. The dependence of dopant incorporation on nitrogen flow rate, C/Si ratio, growth rate, growth temperature and reactor pressure has been investigated. The site competition...

This paper discusses the results of high temperature resistivity and Hall effect studies of Mg-doped GaN and AlxGa1−xN epilayers (0.05 < x < 0.23). The studied samples were grown by molecular beam epitaxy on low temperature buffers of GaN and AlN deposited on a sapphire substrate. The experiments were carried out at temperatures ranging from...