KAHOULI , A

We report an unusual temperature dependence of exciton lifetimes in arrays of GaN nanostructures grown onsemipolar (11-22) oriented Al0.5Ga0.5Nalloy by molecular beam epitaxy.Atomic force microscopy measurementsrevealed: (i) a one-dimensional ordering tendency along the [1-100] crystallographic direction together with (ii)an in-plane anisotropy...

AlGaN-based ultra-violet (UV) light emitting diodes (LEDs) are seen as the best solution for the replacement of traditional mercury lamp technology. By adjusting the Al concentration, a large emission spectrum range from 360 nm (GaN) down to 200 nm (AlN) can be covered. Owing to the large density of defects typically present in AlGaN materials...