KAZAZIS , D.

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from T=1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120–240 K. The maximum is observed at intermediate magnetic...

International audience

We report on measurements in large quantum Hall devices, made of high-quality graphene grown by propane/hydrogen chemical vapor deposition on SiC. These devices, having all the properties of an ideal quantum electrical resistance standard, surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their operational conditions. The...

International audience

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher...

The structural, optical, and transport properties of graphene grown by chemical vapor deposition (CVD) of propane under hydrogen on the Si face of SiC substrates have been investigated. We show that little changes in temperature during the growth can trigger the passivation of the SiC surface by hydrogen. Depending on the growth condition, hole...