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September 2017 (v1)Journal articleUploaded on: December 4, 2022
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November 22, 2021 (v1)Journal article
We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on...
Uploaded on: December 3, 2022 -
December 6, 2019 (v1)Journal article
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Uploaded on: December 4, 2022 -
August 2019 (v1)Journal article
We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium...
Uploaded on: December 4, 2022