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Last name: LABAU
First name: Sébastien
International audience
Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...
Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...