LAHOURCADE , L.

The defect structures in semipolar (11¯22)-GaN, AlN layers grown on m-sapphire by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are characterized by transmission electron microscopy. The epitaxial relationships are identified as [10¯10]GaN ǁ [11¯20]sap and [1¯213]GaN ǁ [0001]sap. Defects are identified as mostly...

Light emission in polar group-III nitride quantum wells (QWs) optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Whereas thin GaN QWs with fast radiative lifetimes are employed in light-emitting devices, the excitons in thick QWs (typ. 7nm) are characterized by a non-zero dipole...

Light emission in polar group-III nitride quantum wells optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Such excitons are characterized by a non-zero dipole moment and long radiative lifetimes, because their constituent electron and hole are spatially separated by the built-in...