LEFEVRE , Gauthier

In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high ION/IOFF (~109) ratio and a significantly small gate leakage current (10−11 A/mm). Thanks to an improved resistance partitioning method, the resistances of the trench...

In this work, fully-vertical GaN trench-MOSFET based-on an ALD-Al2O3 gate dielectric were fabricated and characterized to evaluate its electrical performances. Transistors show a normally-OFF behaviour with high I$_{ON}$/I$_{OFF}$ (~10$^9$ ) and significantly small gate leakage current (10$^{-11}$ A/mm). Thanks to an improved resistance...

International audience

Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...

Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able to rotate at GaN growth temperature. The...