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LEROUX , M

Last name: LEROUX

First name: M

January 2019 (v1)

Journal article

Metadata-only

Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression

Mantach, Rami Vennéguès, P Zuniga Perez, J

We demonstrate the growth of almost strain-free (10-11) semipolar GaN on silicon-on-insulator (SOI) substrates, with no meltbacketching and with a defect density strongly reduced compared to semipolar templates grown on patterned silicon substrates.This is carried out using SOI substrates with a very thin (∼150 nm) 6° off (001) Si top layer. By...

Uploaded on: December 4, 2022