Semipolar/nonpolar GaN-based optoelectronic devices become attractive due to several advantages such as alleviation of quantum-confinement Stark effect, high polarization ratio and optical gain. High performance semipolar/nonpolar InGaN light-emitting diodes (LEDs) and laser diodes (LDs) grown on semipolar/nonpolar bulk GaN substrate have been...
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May 2020 (v1)Journal articleUploaded on: December 4, 2022
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August 2019 (v1)Journal article
We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium...
Uploaded on: December 4, 2022