Off-axis electron holography has been used to measure the width of the depletion region in a series of Tunnel Junction GaN light emitting diodes that have been prepared using different growth processes for blue emission. The total measured potentials are combinations of the mean inner potential, dopant potential and piezoelectric contributions....
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July 14, 2021 (v1)Journal articleUploaded on: December 3, 2022
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November 13, 2020 (v1)Journal article
A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe...
Uploaded on: December 4, 2022