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MURET , Pierre

Last name: MURET

First name: Pierre

September 2012 (v1)

Journal article

Metadata-only

Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen

Muret, Pierre Tainoff, Dimitri Morhain, Christian

Deep level transient spectroscopy of both majority and minority carrier traps is performed in a n-type, nitrogen doped homoepitaxial ZnO layer grown on a m-plane by molecular beam epitaxy. Deep levels, most of them being not detected in undoped ZnO, lie close to the band edges with ionization energies in the range 0.12-0.60 eV. The two hole...

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