NAKAMURA , Shuji

Room temperature photoreflectance investigations have been performed on a series of AlGaN layers grown both by metalorganic vapor phase epitaxy and molecular beam epitaxy on c-plane sapphire substrates. The aluminum composition was ranging between 0% and 20%, and was determined independently in the different growth laboratories, by various...

Semipolar/nonpolar GaN-based optoelectronic devices become attractive due to several advantages such as alleviation of quantum-confinement Stark effect, high polarization ratio and optical gain. High performance semipolar/nonpolar InGaN light-emitting diodes (LEDs) and laser diodes (LDs) grown on semipolar/nonpolar bulk GaN substrate have been...

International audience

We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium...