NEMOZ , M.

Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed. We interpret these effects by first an...

Diffusion at the AlN/Al0.3Ga0.7N interface was investigated by X-ray diffraction, high-angle annular dark field scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. AlN/Al0.3Ga0.7N superlattices (SLs) have been grown at 800 °C on (111) silicon substrates by ammoniaassisted molecular beam epitaxy. Annealings on a...

In this work, a series of AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on patterned (Al)GaN-on-Si seed layers by metalorganic chemical vapor deposition (MOCVD) to study the effect of the (Al)GaN buffer thickness and its aluminum content on the vertical breakdown voltage. The atomic force microscopy (AFM) analysis...

In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN ...